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mga-30789 2 - 6ghz high linearity gain block data sheet attention: observe precautions for handling electrostatic sensitive devices. esd machine model = 110 v esd human body model = 2000 v refer to avago application note a004r: electrostatic discharge, damage and control. description avago technologies mga-30789 is a broadband, high linearity gain block mmic amplifer achieved through the use of avago technologies proprietary 0.25um gaas enhancement-mode phemt process. the device required simple dc biasing components to achieve wide bandwidth performance. the temperature compensated internal bias circuit provides stable current over temperature and process threshold voltage variation. the mga-30789 is housed inside a low cost rohs compliant sot89 industry standard smt package (4.5 x 4.1 x 1.5 mm). component image notes: package marking provides orientation and identifcation 7g = device code x = month of manufacture features ? high linearity ? built in temperature compensated internal bias circuitry ? no rf matching components required ? gaas e-phemt technology [1] ? standard sot89 package ? single, fixed 5v supply ? excellent uniformity in product specifcations ? msl-2 and lead-free halogen free ? high mttf for base station application specifcations 3.5ghz; 5v, 100ma (typical) ? 11.7 db gain ? 41.8 dbm output ip3 ? 3.3 db noise figure ? 25 dbm output power at 1db gain compression 5ghz; 5v, 100ma (typical) ? 8.8 db gain ? 40 dbm output ip3 ? 2.7 db noise figure ? 25.7 dbm output power at 1db gain compression applications ? rf driver amplifer ? general purpose gain block note: 1. enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. 7gx top view rfin gnd rfout #1 #2 #3 bottom view rfout gnd rfin #3 #2 #1
2 absolute maximum rating [1] t a =25 c symbol parameter units absolute max. v dd,max device voltage, rf output to ground v 5.5 p in,max cw rf input power dbm 24 p diss total power dissipation [3] w 0.75 t j,max junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance thermal resistance [3] jc = 52c/w (vdd = 5, ids = 88 ma, tc = 85c) notes: 1. operation of this device in excess of any of these limits may cause permanent damage. 2. thermal resistance measured using infrared measurement technique. 3. this is limited by maximum vdd and ids. derate 19.2 mw/c for tc >111c. product consistency distribution charts [1, 2] figure 1. ids, lsl=83ma , nominal=100ma, usl=117ma figure 2. gain, lsl=8db, nominal=8.8db, usl=10.3db figure 5. nf, nominal=2.7db, usl=3.3db figure 3. oip3, lsl=38dbm, nominal=41dbm figure 4. p1db, lsl=24.5dbm, nominal=25.7dbm 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 usl 90 100 110 usl lsl 38 39 40 41 42 lsl 8 8.5 9 9.5 10 usl lsl 24.5 25 25.5 26 lsl notes: 1. distribution data sample size is 2000 samples taken from 3 diferent wafer lots. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. measurements were made on a characterization test board, which represents a trade-of between optimal oip3, gain and p1db. circuit trace losses have not been de-embedded from measurements above.
3 electrical specifcations [1] t a = 25c, vdd =5v symbol parameter and test condition frequency units min. typ. max. ids quiescent current n/a ma 83 100 117 gain gain 3.5 ghz 5 ghz db 8 11.8 8.8 10.3 oip3 [2] output third order intercept point 3.5 ghz 5 ghz dbm 38 41.8 40 C nf noise figure 3.5 ghz 5 ghz db C 3.3 2.7 3.3 s11 input return loss, 50? source 3.5 ghz 5 ghz db -12 -8.5 s22 output return loss, 50? load 3.5 ghz 5 ghz db -10.5 -9.5 s12 reverse isolation 3.5 ghz 5 ghz db -25 -22 op1db output power at 1db gain compression 3.5 ghz 5 ghz dbm 24.5 24.5 25.7 C notes: 1. measurements obtained using demo board described in figure 30 and 31. 3.5ghz data was taken with 3ghz - 4ghz application test circuit and 5ghz data with 4ghz - 6ghz application test circuit respectively. 2. oip3 test condition: f rf1 - f rf2 = 10mhz with input power of -10dbm per tone measured at worse side band 3. use proper bias, heat sink and de-rating to ensure maximum channel temperature is not exceeded. see absolute maximum ratings and application note (if applicable) for more details.
4 typical performance (2ghz - 3ghz) t a = 25c, vdd = 5v, input signal = cw unless stated otherwise. application test circuit is shown in figure 30 and table 1. figure 6. ids over temperature figure 7. gain over frequency and temperature figure 8. oip3 over frequency and temperature figure 9. p1db over frequency and temperature figure 10. s11 over frequency and temperature figure 11. s22 over frequency and temperature 70 80 90 100 110 120 130 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 temperature (c) ids (ma) 30 32 34 36 38 40 42 44 46 48 50 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 frequency (ghz) oip3 (dbm) 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 frequency (ghz) s11 (db) 5 6 7 8 9 10 11 12 13 14 15 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 frequency (ghz) gain (db) 85c 25c -40c 20 21 22 23 24 25 26 27 28 29 30 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 frequency (ghz) p1db(dbm) -25 -20 -15 -10 -5 0 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 frequency (ghz) s22 (db) 85c 25c -40c 85c 25c -40c 85c 25c -40c 85c 25c -40c -25 -20 -15 -10 -5 0
5 typical performance (2ghz - 3ghz) t a = 25c, vdd = 5v, input signal = cw unless stated otherwise. application test circuit is shown in figure 30 and table 1. figure 12. s12 over frequency and temperature figure 13. noise figure over frequency and temperature 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 frequency (ghz) nf(db) -35 -34 -33 -32 -31 -30 -29 -28 -27 -26 -25 -24 -23 -22 -21 -20 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 frequency (ghz) s12 (db) 85c 25c -40c 85c 25c -40c typical performance (3ghz - 4ghz) t a = 25c, vdd =5v, input signal=cw. application test circuit is shown in figure 30 and table 2. figure 14. ids over temperature figure 15. gain over frequency and temperature figure 16. oip3 over frequency and temperature figure 17. p1db over frequency and temperature 70 80 90 100 110 120 130 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 temperature (c) 30 32 34 36 38 40 42 44 46 48 50 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 frequency (ghz) oip3 (dbm) 5 6 7 8 9 10 11 12 13 14 15 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 frequency (ghz) gain (db) 20 21 22 23 24 27 26 25 28 29 30 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 frequency (ghz) p1db(dbm) ids (ma) 85c 25c -40c 85c 25c -40c 85c 25c -40c
6 figure 18. s11 over frequency and temperature figure 19. s22 over frequency and temperature typical performance (3ghz - 4ghz) t a = 25c, vdd =5v, input signal=cw. application test circuit is shown in figure 30 and table 2. figure 20. s12 over frequency and temperature figure 21. noise figure over frequency and temperature -25 -20 -15 -10 -5 0 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 frequency (ghz) s11 (db) -25 -20 -15 -10 -5 0 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 frequency (ghz) s22 (db) -35 -32 -29 -26 -23 -20 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 frequency (ghz) s12 (db) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 frequency (ghz) nf(db) 85c 25c -40c 85c 25c -40c 85c 25c -40c 85c 25c -40c figure 22. ids over temperature figure 23. gain over frequency and temperature typical performance (4ghz - 6ghz) t a = 25c, vdd =5v, input signal=cw. application test circuit is shown in figure 30 and table 3. 70 80 90 100 110 120 130 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 temperature (c) ids (ma) 5 6 7 8 9 10 11 12 13 14 15 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 frequency (ghz) gain (db) 85c 25c -40c
7 figure 24. oip3 over frequency and temperature figure 25. p1db over frequency and temperature figure 26. s11 over frequency and temperature figure 27. s22 over frequency and temperature figure 28. s12 over frequency and temperature figure 29. noise figure over frequency and temperature typical performance (4ghz - 6ghz) t a = 25c, vdd =5v, input signal=cw. application test circuit is shown in figure 30 and table 3. 30 32 34 36 38 40 42 44 46 48 50 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 frequency (ghz) oip3 (dbm) -25 -20 -15 -10 -5 0 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 frequency (ghz) s11 (db) 20 21 22 23 24 25 26 27 28 29 30 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 frequency (ghz) p1db(dbm) -25 -20 -15 -10 -5 0 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 frequency (ghz) s22 (db) -28 -26 -24 -22 -20 -18 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 frequency (ghz) s12 (db) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 frequency (ghz) nf(db) 85c 25c -40c 85c 25c -40c 85c 25c -40c 85c 25c -40c 85c 25c -40c 85c 25c -40c
8 application schematic components table and demo board figure 30. application schematic rfout l1 vdd vdd c8 c1 c3 c2 top view c7 c14 l4 l3 rfin 3 1 2 rfin gnd rfout figure 31. demo board layout c14 C recommended pcb material is 10 mils rogers ro4350, with fr4 backing for mechanical strength. C suggested component values may vary according to layout and pcb material.
9 demo board part list table 1. 2ghz - 3ghz application schematic components circuit symbol size value part number description l1 0402cs 19nh 0402cs-19nx (coilcraft) wire wound chip inductor l3 na l4 0402 4.3nh 0402cs-4n3x (coilcraft) wire wound chip inductor c1 0402 100pf grm1555c1h101jz01 (murata) ceramic chip capacitor c2 0402 0.1uf grm155r71c104ka88d (murata) ceramic chip capacitor c3 0805 2.2uf grm21br61e225ka12l (murata) ceramic chip capacitor c7 0402 10pf grm1555c1h100jz01 (murata) ceramic chip capacitor c8 0402 2.2pf grm1555c1h2r2ca01 (murata) ceramic chip capacitor c14 0402 1.2nh ll1005-fhl1n2 (toko) mlc inductor table 2. 3ghz - 4ghz application schematic components circuit symbol size value part number description l1 0603 4.7nh 0603cs-4n7x (coilcraft) wire wound chip inductor l3 na l4 0402 100nh ll1005-fhlr10j (toko) mlc inductor c1 0402 100pf grm1555c1h101jz01b (murata) ceramic chip capacitor c2 0402 0.1uf grm155r71c104ka88d (murata) ceramic chip capacitor c3 0805 2.2uf grm21br61e225ka12l (murata) ceramic chip capacitor c7 0402 10pf grm1555c1h100ja01 (murata) ceramic chip capacitor c8 0402 5.6pf grm1555c1h5r6ca01 (murata) ceramic chip capacitor c14 na table 3. 4ghz - 6ghz application schematic components circuit symbol size value part number description l1 0603 5.1nh llq1608-f5n1 (toko) wire wound chip inductor l3 0402 4.7nh ll1005-fhl4n7 (toko) mlc inductor l4 na c1 0402 100pf grm1555c1h101jz01 (murata) ceramic chip capacitor c2 0402 0.1uf grm155r71c104ka88d (murata) ceramic chip capacitor c3 0805 2.2uf grm21br61e225ka12l (murata) ceramic chip capacitor c7 0402 2.2pf cm05ch2r2c50ah (kyocera) ceramic chip capacitor c8 0402 2.2pf cm05ch2r2c50ah (kyocera) ceramic chip capacitor c14 na
10 test circuit for s-parameter and noise parameter figure 32. s-parameter and noise parameter test circuit 3 1 2 rfin gnd vdd rfout top view port1 port2 / bias tee
11 typical s-parameter (vdd = 5v, t a = 25c, 50 ohm) freq (ghz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 0.1 -0.89 171.29 -63.15 137.09 -70.77 74.72 -6.40 178.55 0.5 -0.87 134.26 -56.43 159.75 -58.33 62.10 -7.78 155.81 1 -1.28 79.26 -21.10 165.63 -53.76 50.95 -12.61 144.22 1.5 -2.61 5.44 3.05 90.24 -40.55 11.02 -13.88 -157.29 2 -8.89 -48.46 13.14 -45.05 -30.39 -122.16 -7.87 155.45 2.2 -10.88 -75.15 13.54 -82.79 -29.06 -158.46 -8.29 148.89 2.4 -14.73 -111.10 13.66 -114.23 -27.99 172.79 -7.98 144.64 2.6 -20.58 -165.76 13.51 -141.52 -27.15 148.77 -7.42 139.09 2.8 -22.68 110.04 13.18 -165.17 -26.55 129.02 -7.02 133.06 3 -20.20 53.49 12.79 174.17 -26.01 112.23 -6.75 127.76 3.2 -18.95 13.54 12.36 155.70 -25.56 97.67 -6.59 123.30 3.4 -18.13 -25.72 11.96 138.97 -25.14 84.61 -6.50 119.81 3.6 -16.60 -63.19 11.55 123.41 -24.75 72.79 -6.39 116.90 3.8 -14.55 -93.60 11.13 108.88 -24.41 61.86 -6.31 113.70 4 -12.62 -116.51 10.71 95.32 -24.10 51.65 -6.27 110.52 4.2 -11.03 -134.23 10.30 82.60 -23.82 41.96 -6.30 106.60 4.4 -9.89 -148.50 9.90 70.48 -23.57 33.02 -6.43 102.28 4.6 -9.17 -160.67 9.54 59.03 -23.29 24.51 -6.60 97.08 4.8 -8.72 -172.00 9.23 48.03 -22.99 16.15 -6.84 91.25 5 -8.54 176.59 8.95 37.24 -22.69 7.90 -7.06 84.67 5.2 -8.98 162.84 8.82 25.05 -22.25 -1.75 -7.37 70.40 5.4 -8.89 149.06 8.51 14.69 -22.01 -9.74 -7.27 65.40 5.6 -8.89 134.06 8.20 4.48 -21.79 -17.80 -7.09 60.58 5.8 -8.87 117.54 7.91 -5.83 -21.60 -26.09 -6.89 55.99 6 -8.74 99.65 7.58 -16.09 -21.45 -34.31 -6.67 51.77 6.2 -8.36 81.31 7.21 -26.36 -21.36 -42.67 -6.38 47.34 6.4 -7.71 63.61 6.82 -36.57 -21.32 -51.08 -6.06 42.69 6.6 -6.88 47.92 6.38 -46.67 -21.35 -59.31 -5.73 37.79 6.8 -6.01 34.84 5.86 -56.40 -21.46 -67.30 -5.43 32.62 7 -5.21 24.24 5.32 -65.48 -21.59 -74.72 -5.16 27.32 8 -3.02 -3.41 3.00 -103.98 -22.10 -105.83 -4.71 -5.35 9 -2.59 -27.30 1.34 -139.80 -22.25 -135.66 -4.53 -43.08 10 -2.12 -67.56 -0.79 -177.42 -23.00 -168.17 -3.86 -73.44 11 -1.21 -103.01 -4.16 150.87 -25.17 164.20 -2.79 -92.66 12 -0.80 -117.86 -7.00 130.49 -26.95 146.68 -2.33 -103.81 13 -0.88 -131.07 -8.26 108.78 -27.28 127.48 -2.27 -121.44 14 -1.02 -151.35 -8.82 81.73 -26.93 103.00 -2.42 -146.67 15 -0.93 -174.30 -10.38 52.63 -27.48 77.03 -2.03 -177.32 16 -0.83 173.31 -12.04 36.30 -27.78 64.17 -1.57 173.29 17 -0.93 162.53 -12.15 20.39 -26.28 48.69 -1.69 161.95 18 -1.09 149.25 -11.95 2.84 -24.66 32.64 -1.62 149.85 19 -1.52 132.50 -10.69 -19.47 -22.19 10.57 -2.31 131.12 20 -1.75 111.66 -10.17 -46.41 -20.49 -16.89 -2.46 104.29
12 part number ordering information part number no. of devices container MGA-30789-BLKG 100 antistatic bag mga-30789-tr1g 3000 13 tape/reel typical noise parameters (vdd = 5v, t a = 25c, 50 ohm) freq (ghz) f min (db) opt mag opt ang r n /z 0 2.0 5.5 0.25 52 1.1 2.5 3.81 0.26 77 0.81 3.0 3.14 0.27 110 0.40 3.5 2.36 0.28 159 0.20 4.0 2.17 0.29 -163 0.19 4.5 2.28 0.30 -125 0.23 5.0 2.61 0.31 -97 0.38 5.5 2.68 0.32 -59 0.59 6.0 2.78 0.33 -27 0.53 sot89 package dimensions dimensions in mm dimensions in inches symbols minimum nominal maximum minimum nominal maximum a 1.40 1.50 1.60 0.055 0.059 0.063 l 0.89 1.04 1.20 0.0350 0.041 0.047 b 0.36 0.42 0.48 0.014 0.016 0.018 b1 0.41 0.47 0.53 0.016 0.018 0.030 c 0.38 0.40 0.43 0.014 0.015 0.017 d 4.40 4.50 4.60 0.173 0.177 0.181 d1 1.40 1.60 1.75 0.055 0.062 0.069 d2 1.45 1.65 1.80 0.055 0.062 0.069 e 3.94 - 4.25 0.155 - 0.167 e1 2.40 2.50 2.60 0.094 0.098 0.102 e1 2.90 3.00 3.10 0.114 0.118 0.122 s 0.65 0.75 0.85 0.026 0.030 0.034 e 1.40 1.50 1.60 0.054 0.059 0.063 matte finish polish polish d d1 e1 e l b e e1 s c b1 b a or d2 d1 1.24 1.23 0.77 b1 0.2 half etching 1.625 2.35 depth 0.100 e d d1 e1 e l e e1 s or
13 device orientation tape dimensions dimensions in mm notes: 1. 10 sprocket hole pitch cumulative tolerance 0.2 2. camber in compliance with eia 481 3. pocket position relative to sprocket hole measured as true position of pocket, not pocket hole 12.0 .3 ao = 4.60 bo = 4.90 ko = 1.90 5.50 .05 see note 3 1.75 .10 8.00 ? 1.5 +0.1/-0.0 2.00 .05 see note 3 4.00 see note 1 section a - a ? 1.50 min. ao ko r 0.3 typ. r 0.3 max. 0.30 .05 a a bo user feed direction cover tape carrier tape reel 7gx 7gx 7gx 7gx
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2013 avago technologies. all rights reserved. av02-2249en - may 23, 2013 reel dimensions C 13 reel ? 20.2 m i n 2.0 0.5 ? 13.0 +0.5 -0.2 102.0 ref 330.0 ref 8.4 (measured at hub) (measured at hub) "a" attention electrostatic sensitive devices safe handling required minneapolis usa u.s pat 4726534 r lokreel r 11.1 max. detail "a" detail "b" ps 6 6 p s 1.5 88 ref 96.5 +0.3 - 0.2 dimensions in mm

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